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MMST3904

GME
Part Number MMST3904
Manufacturer GME
Description NPN Silicon Epitaxial Planar Transistor
Published Apr 22, 2018
Detailed Description NPN Silicon Epitaxial Planar Transistor FEATURES  Power dissipation.(PC=0.2W)  Complements the MMST3906. Pb Lead-fre...
Datasheet PDF File MMST3904 PDF File

MMST3904
MMST3904

Overview
NPN Silicon Epitaxial Planar Transistor FEATURES  Power dissipation.
(PC=0.
2W)  Complements the MMST3906.
Pb Lead-free APPLICATIONS  Audio frequency general purpose amplifier.
Production specification MMST3904 ORDERING INFORMATION Type No.
Marking MMST3904 K2N SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 60 VCEO Collector-Emitter Voltage 40 VEBO Emitter-Base Voltage 5 IC Collector Current -Continuous 200 PC Collector Dissipation 200 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V mA mW ℃ F051 Rev.
A www.
gmesemi.
com 1 Production specification NPN Silicon Epitaxial Planar Transistor MMST3904 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=10μA,IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 40 V Emitter-b...


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