PNP Silicon Epitaxial Planar Transistor - GME
Description
PNP Silicon Epitaxial Planar Transistor
FEATURES
Power dissipation.
(PC=200mW)
Pb
Epitaxial planar die construction.
Lead-free
Complementary NPN type MMST2222A.
APPLICATIONS
General purpose application.
Production specification
MMST2907A
ORDERING INFORMATION
Type No.
Marking
MMST2907A
K3F
SOT-323
Package Code SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
-60
VCEO
Collector-Emitter Voltage
-60
VEBO
Emitter-Base Voltage
-5
IC Collector Current -Continuous
-600
PC Collector Dissipation
200
RθJA
Thermal Resistance,Junction to Ambient
625
Units V V V mA mW ℃/W
Tj,Tstg
Junction and Storage Temperature
-55 to +150
℃
F050 Rev.
A
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Production specification
PNP Silicon Epitaxial Planar Transistor
MMST2907A
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN MAX UNIT
Collector-base breakdown voltage ...
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