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HXN0680

Power-IC
Part Number HXN0680
Manufacturer Power-IC
Description Silicon N-Channel Power MOSFET
Published Apr 21, 2018
Detailed Description Description The HXN0680 is n-channel power trench MOSFET with latest technology. So fast switching speed and low onresis...
Datasheet PDF File HXN0680 PDF File

HXN0680
HXN0680

Overview
Description The HXN0680 is n-channel power trench MOSFET with latest technology.
So fast switching speed and low onresistance.
Usually used at power switching application .
It is also intended for any applications with low gate drive requirements .
Features ·Latest Trench Power MOSFET technology ·Low On-state Resistance ·High Current Density ·Low Gate Charge ·100% UIS Test Product Summery BVDS 60V RDSON 6.
5mΩ ID 80A Applications ·Moter Driver ·Power Management 1、Absolute maximum ratings Symbol VDS VGS ID(1) IDM(2) Parameter Drain-source voltage (VGS = 0) Gate-source voltag Drain current (continuous) at TC = 25°C Drain current (pulsed) 1/3 Value 60 ±25 80 320 Unit V V A A PD EAS(3...


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