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BF1012S

Siemens Semiconductor Group
Part Number BF1012S
Manufacturer Siemens Semiconductor Group
Description Silicon N-Channel MOSFET Tetrode
Published Mar 23, 2005
Detailed Description BF 1012S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating volt...
Datasheet PDF File BF1012S PDF File

BF1012S
BF1012S

Overview
BF 1012S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Q62702-F1627 Pin Configuration 1=S 2=D 3 = G2 4 = G1 Package SOT-143 BF 1012S NYs Maximum Ratings Parameter Drain-source voltage Symbol Value 16 25 10 3 200 -55 .
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+150 150 Unit V mA V mW °C VDS ID ±I G1/2SM +VG1SE Continuos drain current Gate 1/gate 2 peak source current Gate 1 (external biasing) Total power dissipation, T S ≤ 76 °C Storage temperature Channel temperature Ptot T stg T ch Thermal Resistance Channel -...


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