Silicon Epitaxial Planar Transistor - GME
Description
Silicon Epitaxial Planar Transistor
FEATURES
Good Linearity of fT.
Pb
Lead-free
Production specification
2SC3125
ORDERING INFORMATION
Type No.
Marking
2SC3125
HH
SOT-23
Package Code SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
30
VCEO
Collector-Emitter Voltage
25
VEBO
Emitter-Base Voltage
4
IC Collector Current -Continuous
50
IB Base Current
25
PC Collector Dissipation
150
Tj,Tstg
Junction and Storage Temperature
-55 to +125
Units V V V mA mA mW ℃
C185 Rev.
A
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Production specification
Silicon Epitaxial Planar Transistor
2SC3125
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP
Collector-emitter breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector-base output capacitance
V(B...
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