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2SA1162

GME
Part Number 2SA1162
Manufacturer GME
Description Silicon Epitaxial Planar Transistor
Published Apr 15, 2018
Detailed Description Production specification Silicon Epitaxial Planar Transistor FEATURES  Excellent hFE linearity.  Commplementary to 2...
Datasheet PDF File 2SA1162 PDF File

2SA1162
2SA1162


Overview
Production specification Silicon Epitaxial Planar Transistor FEATURES  Excellent hFE linearity.
 Commplementary to 2SC2712.
 High voltage and high current.
 Low noise.
Pb Lead-free 2SA1162 APPLICATIONS  General purpose application.
ORDERING INFORMATION Type No.
Marking 2SA1162 SO/SY/SG SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage -50 VCEO VEBO Collector-Emitter Voltage Emitter-Base Voltage -50 -5 IC Collector Current -Continuous -150 IB Base Current PC Collector Dissipation -30 150 Tj,Tstg Junction and Storage Temperature -55 to +125 Units V V V mA mA mW ℃ C092 Rev.
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