DatasheetsPDF.com

2SD2137A

Part Number	2SD2137A
Manufacturer	GME
Description	Power Transistors
Published	Apr 4, 2018
Detailed Description	Production specification Power Transistors 2SD2137A FEATURES  High Forward Current Transfer Ratio hFE Which Has Sat...
Datasheet	2SD2137A PDF File

Overview

Production specification Power Transistors 2SD2137A FEATURES  High Forward Current Transfer Ratio hFE Which Has Satisfactory Linearity.
Pb Lead-free  Low Collector-emitter Saturation Voltage VCE(sat).
 Allowing Supply With The Radial Taping.
APPLICATIONS  For Power Amplification.
 Complementary to 2SB1417A.
TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage 80 V VCEO VEBO IC ICP PC Tj,Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Collector Dissipation Junction and Storage Temperature 80 V 6V 3A Ta=25℃ 5A 15 W 2 -55 to +150 ℃ ...

Similar Datasheet

2SD213 NPN Transistor - INCHANGE
2SD2130 Silicon NPN Transistor - Toshiba Semiconductor
2SD2131 Silicon NPN Transistor - Toshiba Semiconductor
2SD2132 NPN SIlicon Transistor - Rohm
2SD2133 Silicon NPN Transistor - Panasonic Semiconductor
2SD2135 Silicon NPN Power Transistor - Panasonic
2SD2136 Silicon NPN Transistor - Panasonic Semiconductor
2SD2136 NPN SILICON TRANSISTOR - UTC
2SD2136 NPN Transistor - SeCoS
2SD2136 NPN Transistor - WEJ

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)