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2SD1762

GME
Part Number 2SD1762
Manufacturer GME
Description Power Transistor
Published Apr 4, 2018
Detailed Description Power Transistor(50V,3A ) FEATURES  Low VCE(sat) VCE(sat)=0.5V(Typ)（IC/IB=2A/0.2A）  Complements the 2SB1185. Pb Lead-...
Datasheet PDF File 2SD1762 PDF File

2SD1762
2SD1762

Overview
Power Transistor(50V,3A ) FEATURES  Low VCE(sat) VCE(sat)=0.
5V(Typ)（IC/IB=2A/0.
2A）  Complements the 2SB1185.
Pb Lead-free Production specification 2SD1762 TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO VEBO IC PC Tj,Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Collector Dissipation Ta=25℃ TC=25℃ Junction and Storage Temperature 50 V 5V 3 A 4.
5 1 W 25 -55 to +150 ℃ X036 Rev.
A www.
gmesemi.
com 1 Production specification Power Transistor(50V,3A ) 2SD1762 ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified.
Parameter Symbol Test conditions MIN Typ MAX UNIT Collector-base Breakdown Voltage BVCBO IC=50µA,IB=0 60 V Collector-emitter Breakdown Voltage BVCEO IC=1mA,IB=0 50 V Emitter-base Breakdown Voltage BVEBO IE=50µA,IC=0 5 V Collector Cut-off Current ICBO V...


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