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2SA1012

GME
Part Number 2SA1012
Manufacturer GME
Description PNP Epitaxial Silicon Transistor
Published Apr 4, 2018
Detailed Description PNP Epitaxial Silicon Transistor FEATURES  Low Collector Saturation Voltage. VCE(sat)=-0.4V(Max.)at IC=-3A  Compleme...
Datasheet PDF File 2SA1012 PDF File

2SA1012
2SA1012

Overview
PNP Epitaxial Silicon Transistor FEATURES  Low Collector Saturation Voltage.
VCE(sat)=-0.
4V(Max.
)at IC=-3A  Complements the 2SC2562.
Pb Lead-free  High Speed Switching Time:tstg=1.
0µs(Typ.
) Production specification 2SA1012 TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO VEBO IC PC Tj,Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction and Storage Temperature -50 V -5 V -5 A 2W -55 to +150 ℃ X028 Rev.
A www.
gmesemi.
com 1 Production specification PNP Epitaxial Silicon Transistor 2SA1012 ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified.
Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base Breakdown Voltage V(BR)CBO IC=-100μA,IE=0 -60 V Collector-emitter Breakdown Voltage V(BR)CEO IC=-10mA,IB=0 -50 V Emitter-base Breakdown Voltage V(BR)EBO ...


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