● VDS =100V,ID =150A RDS(ON) <5.7mΩ @ VGS=10V (Typ:5.0? mΩ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipati...
FNK01N15T PDF File
