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FNK2012E

FNK
Part Number FNK2012E
Manufacturer FNK
Description N-Channel Power MOSFET
Published Mar 23, 2018
Detailed Description N-Channel Enhancement Mode Power MOSFET Description The FNK2012E uses advanced trench technology to provide excellent RD...
Datasheet PDF File FNK2012E PDF File

FNK2012E
FNK2012E

Overview
N-Channel Enhancement Mode Power MOSFET Description The FNK2012E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.
8V.
This device is suitable for use as a load switch or in PWM applications .
It is ESD protested.
General Features ● VDS = 20V,ID =8A R DS(ON) < 17mΩ @ VGS=2.
5V R DS(ON) < 13mΩ @ VGS=4.
5V ESD Rating: 2000V HBM ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Application ● Uni-directional load switch ● Bi-directional load switch FNK2012E Schematic diagram TSSOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package FNK...


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