DatasheetsPDF.com

ME7806S-G

Matsuki
Part Number ME7806S-G
Manufacturer Matsuki
Description N-Channel MOSFET
Published Mar 22, 2018
Detailed Description ME7806S-G N-Channel 30V (D-S) MOSFET Integrated Schottky Diode GENERAL DESCRIPTION The ME7806S N-Channel logic enhancem...
Datasheet PDF File ME7806S-G PDF File

ME7806S-G
ME7806S-G

Overview
ME7806S-G N-Channel 30V (D-S) MOSFET Integrated Schottky Diode GENERAL DESCRIPTION The ME7806S N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package.
FEATURES ● RDS(ON) ≦8.
5mΩ@VGS=10V ● RDS(ON) ≦16.
5mΩ@VGS=4.
5V APPLICATIONS ● Power Management in Note book ● Portable Eq...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)