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BT25T120CKR

Huajing Microelectronics
Part Number BT25T120CKR
Manufacturer Huajing Microelectronics
Description Silicon FS Trench IGBT
Published Mar 22, 2018
Detailed Description Silicon FS Trench IGBT BT25T120 CKR ○R General Description： Using HUAJING's proprietary trench design, advanced FS(fie...
Datasheet PDF File BT25T120CKR PDF File

BT25T120CKR
BT25T120CKR

Overview
Silicon FS Trench IGBT BT25T120 CKR ○R General Description： Using HUAJING's proprietary trench design, advanced FS(field stop) technology and integrated with Free Wheeling Diode, the 1200V Trench FS IGBT offers superior conduction and switching performances, high avalanche ruggedness.
VCES IC Ptot (TC=25℃) VCE(SAT) 1200 V 25 A 312 W 1.
95 V Features： l Trench FS Technology, Positive temperature coefficient l Low saturation voltage: VCE(sat), typ =1.
95V @ IC =25A and TC = 25°C l Extremely enhanced avalanche capability Applications： Power switch circuit of induction cooker(IH).
Absolute Maximum Ratings （Tc= 25℃ unless otherwise specified）： Symbol Parameter VCES Collector-Emitter Vo...


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