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ME50N10AT-G

Part Number	ME50N10AT-G
Manufacturer	Matsuki
Description	N-Channel MOSFET
Published	Mar 21, 2018
Detailed Description	ME50N10AT /ME50N10AT-G N- Channel 100V (D-S) MOSFET GENERAL DESCRIPTION The ME50N10AT-G is the N-Channel logic enhance...
Datasheet	ME50N10AT-G PDF File

Overview

ME50N10AT /ME50N10AT-G N- Channel 100V (D-S) MOSFET GENERAL DESCRIPTION The ME50N10AT-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION FEATURES ● RDS(ON)≦40mΩ@VGS=10V ● RDS(ON)≦60mΩ@VGS=4.
5V ● Super high density cell design for extremel...

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ME50N10AT N-Channel MOSFET - Matsuki
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