DatasheetsPDF.com

ME25N10F-G

Matsuki
Part Number ME25N10F-G
Manufacturer Matsuki
Description N-Channel MOSFET
Published Mar 21, 2018
Detailed Description ME25N10F/ME25N10F-G N- Channel 100V (D-S) MOSFET GENERAL DESCRIPTION The ME25N10F is the N-Channel logic enhancement m...
Datasheet PDF File ME25N10F-G PDF File

ME25N10F-G
ME25N10F-G

Overview
ME25N10F/ME25N10F-G N- Channel 100V (D-S) MOSFET GENERAL DESCRIPTION The ME25N10F is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
PIN CONFIGURATION FEATURES ● RDS(ON)≦85mΩ@VGS=10V ● RDS(ON)≦105mΩ@VGS=5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter (TO-220F) Top View * The Ordering Information: ME25N10F (Pb-free) ME25N10F-G (Green product-Halogen free...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)