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ME25N10T

Part Number	ME25N10T
Manufacturer	Matsuki
Description	N-Channel MOSFET
Published	Mar 21, 2018
Detailed Description	ME25N10T/ME25N10T-G N- Channel 100V (D-S) MOSFET GENERAL DESCRIPTION The ME25N10T is the N-Channel logic enhancement m...
Datasheet	ME25N10T PDF File

Overview

ME25N10T/ME25N10T-G N- Channel 100V (D-S) MOSFET GENERAL DESCRIPTION The ME25N10T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits , and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION FEATURES ● RDS(ON)≦85mΩ@VGS=10V ● RDS(ON)≦105mΩ@VGS=4.
5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on...

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