NPN SILICON RF POWER TRANSISTOR - ASI
Description
MRA1417-11
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MRA1417-11 is a Common
Base Device Designed for Class C Power Amplifier Applications up to 1.
7 GHz.
FEATURES INCLUDE:
• Gold Metallization • Emitter Ballasting • Input Matching
MAXIMUM RATINGS
IC 4.
0 A
VCBO
50 V
PDISS
12 W @ TC = 25 °C
TJ -65 °C to +200 °C
TSTG
-65 °C to +200 °C
θJC 4.
5 °C/W
PACKAGE STYLE 250 2L FLG (C)
1 = COLLECTOR 2 = BASE 3 = EMITTER
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
BVCES
IC = 80 mA
BVEBO
IE = 1.
0 mA
ICBO
VCB = 28 V
hFE VCE = 5.
0 V IC = 4.
0 A
MINIMUM TYPICAL MAXIMUM 50 3.
5 2.
0 10 100
UNITS V V mA ---
Cob VCB = 28 V
f = 1.
0 MHz
12 pF
PG ηC
VCE = 28 V POUT = 11 W
f = 1700 MHz
7.
4 45
dB %
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV.
A
1/1
...
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