● VDS =30V,ID =80A RDS(ON) <5.9mΩ @ VGS=10V
(Typ:5mΩ)
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● S...
FNK08N03DA PDF File
