N-Channel Power MOSFET - FNK
Description
FNK6578D
FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK6578D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Features
● VDS = 65V,ID =78A RDS(ON) < 8.
2mΩ @ VGS=10V
(Typ:6.
7mΩ)
● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation
Schematic diagram
Application
● Power switching application ● Hard switched and High frequency circuits ● Uninterruptible power supply
To-263 Top View
Package Marking and Ordering Information
Device Marking
Device
Device Package
FNK6578D
FNK6578D
TO-263
Reel Size -
Tape width -
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Curr...
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