● VDS =20V,ID =100A RDS(ON) <2.05mΩ @ VGS=4.5V (Typ1.8mΩ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation...
FNK10N01 PDF File
