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SCT2H12NY

Part Number	SCT2H12NY
Manufacturer	ROHM
Description	N-channel SiC power MOSFET
Published	Mar 5, 2018
Detailed Description	SCT2H12NY N-channel SiC power MOSFET Datasheet VDSS RDS(on) (Typ.) ID PD 1700V 1.15 4A 44W Features 1) Low on-resi...
Datasheet	SCT2H12NY PDF File

Overview

SCT2H12NY N-channel SiC power MOSFET Datasheet VDSS RDS(on) (Typ.
) ID PD 1700V 1.
15 4A 44W Features 1) Low on-resistance 2) Fast switching speed 3) Long creepage distance with no center lead 4) Simple to drive 5) Pb-free lead plating ; RoHS compliant Application ・Auxilialy power supplies ・Switch mode power supplies Outline TO-268-2L (2) Inner circuit (1) (3) (2) (1) Gate (2) Drain *1 (3) Source (1) *1 Body Diode (3) Packaging specifications Packing Embossed tape Reel size (mm) 330 Tape width (mm) Type Basic ordering unit (pcs) 24 400 Taping code TB Marking SCT2H12NY Absolute maximum ratings (Ta = 25°C) Parameter Drain - Source voltage Continuous drain curre...

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