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B5817W

GME
Part Number B5817W
Manufacturer GME
Description Schottky Barrier Diode
Published Feb 12, 2018
Detailed Description Production specification Schottky Barrier Diode FEATURES  Extremely low VF.  Low stored change,majority carrier Condu...
Datasheet PDF File B5817W PDF File

B5817W
B5817W

Overview
Production specification Schottky Barrier Diode FEATURES  Extremely low VF.
 Low stored change,majority carrier Conduction.
 Low power loss/high efficient.
 MSL 1.
Pb Lead-free B5817W APPLICATIONS  For Use In Low Voltage, High Frequency Inverters.
 Free Wheeling, And Polarity Protection Applications.
SOD-123 ORDERING INFORMATION Type No.
Marking B5817W SJ Package Code SOD-123 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter symbol Non-Repetitive Peak reverse voltage VRSM Value 24 Peak repetitive Peak reverse voltage Working Peak Reverse voltage DC Reverse Voltage VRRM VRWM VR 20 RMS Reverse Voltage Average Rectified output Current Repetitive Peak Forward Current (At Rated VR, Square Wave, 100 kHz, TL = 95°C) Peak forward surge current@=8.
3ms Power Dissipation Thermal Resistance Junction to Ambient Junction and Storage Temperature Rage VR(RMS) Io IFRM IFSM Pd RθJA TJ,TSTG 14 1 625 10 500 200 -65 to+150 Unit V V V A mA A mW ℃/W ...


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