Photo MOS Relay - Panasonic
Description
AQV45, AQV454H
8.
8 .
346
6.
4 .
252
3.
9 .
154
8.
8 .
346
Height includes standoff
CCAAD DDaattaa
6.
4 .
252
3.
6 .
142
mm inch
16
25 34
HE 1 Form B (AQV45, AQV454H)(Standard type)
(Standard type)
Normally closed DIP6-pin type
Low on-resistance with 250V/400V load voltage
HE 1 Form B
(AQV45, AQV454H)
FEATURES
1.
1 Form B (Normally-closed) type with low on-resistance This has been achieved thanks to the built-in MOSFET processed by our proprietary method, DSD (Doublediffused and Selective Doping) method.
Cross section of the normally-closed type of power MOS
Passivation membrane
Source electrode Gate electrode
Intermediate insulating
membrane
N+ P+ N+
N+ P+ N+
Gate oxidation membrane
NN+
Drain electrode
2.
Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset voltage to enable control of low-level analog signals without distortion.
3.
High sensitivity and low onresistance Can control max.
0.
2 A load current with 5 mA input cu...
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