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IRF4N60

ETC
Part Number IRF4N60
Manufacturer ETC
Description POWER MOSFET
Published Jan 17, 2018
Detailed Description IRF4N60 POWER MOSFET GENERAL DESCRIPTION FEATURES This advanced high voltage MOSFET is designed to withstand high ene...
Datasheet PDF File IRF4N60 PDF File

IRF4N60
IRF4N60

Overview
IRF4N60 POWER MOSFET GENERAL DESCRIPTION FEATURES This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drain-to-source diode with fast recovery time.
Designed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits.
‹ ‹ ‹ ‹ ‹ ‹ Higher Current Rating Lower Rds(on) Lower Capacitances Lower Total Gate Charge Tighter VSD Specifications Avalanche Energy Specified PIN CONFIGURATION TO-220/TO-220FP Top View SYMBOL D GATE DRAIN SOURCE G 12 3 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS Rating Drain to Current Ё...


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