DatasheetsPDF.com

M58WR064KT

Micron
Part Number M58WR064KT
Manufacturer Micron
Description 64Mb Multi Bank Burst Flash memories
Published Jan 11, 2018
Detailed Description M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Features M58WRxxxKT/B - 32Mb & 64Mb, 1.8V, x16 Multi Bank ...
Datasheet PDF File M58WR064KT PDF File

M58WR064KT
M58WR064KT


Overview
M58WRxxxKT/B - 32Mb - 64Mb, 1.
8V, x16 Multi Bank Burst, Flash Features M58WRxxxKT/B - 32Mb & 64Mb, 1.
8V, x16 Multi Bank Burst, Flash M58WR032KT, M58WR064KT, M58WR032KB, M58WR064KB Features • Supply voltage – VDD = 1.
7V to 2V for PROGRAM, ERASE and READ – VDDQ = 1.
7V to 2V for I/O buffers – VPP = 9V for fast program • SYCHRONOUS/ASYCHRONOUS READ – SYCHRONOUS BURST READ mode: 66 MHz – Asynchronous/synchronous page READ mode – Random access times: 70ns • SYCHRONOUS BURST READ SUSPEND • Programming time – 10µs by word typical for fast factory program – Double/quadruple word program option – Enhanced factory program options • Memory blocks – Multiple bank memory array: 4Mb banks – Parameter blocks (top or bottom location) • Dual operations – PROGRAM ERASE in one bank while read in others – No delay between read and write operations • Block locking – All blocks locked at power-up – Any combination of blocks can be locked – WP# for block lock-dow...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)