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BAV99W

Part Number	BAV99W
Manufacturer	Toshiba
Description	Switching Diodes
Published	Jan 9, 2018
Detailed Description	Switching Diodes Silicon Epitaxial Planar BAV99W 1. Applications • High-Speed Switching 2. Packaging and Internal Circui...
Datasheet	BAV99W PDF File

Overview

Switching Diodes Silicon Epitaxial Planar BAV99W 1.
Applications • High-Speed Switching 2.
Packaging and Internal Circuit BAV99W 1: Anode 1 2: Cathode 2 3: Cathode 1/Anode 2 USM 3.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Peak reverse voltage VRM 100 V Reverse voltage VR 100 Peak forward current IFM (Note 1) 500 mA Average rectified current IO (Note 2) 150 Non-repetitive peak forward surge current IFSM (Note 2), (Note 3) 2 A Power dissipation PD 100 mW Junction temperature Tj 150  Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.
g.
the application of hig...

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