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BSS65R

ETC
Part Number BSS65R
Manufacturer ETC
Description SOT23 PNP SILICON PLANAR HIGH SPEED TRANSISTOR
Published Mar 23, 2005
Detailed Description SOT23 PNP SILICON PLANAR HIGH SPEED TRANSISTOR ISSUE 2 - SEPTEMBER 1995 PARTMARKING DETAIL — 7 BSS65 - L1 BSS65R - L5 B...
Datasheet PDF File BSS65R PDF File

BSS65R
BSS65R

Overview
SOT23 PNP SILICON PLANAR HIGH SPEED TRANSISTOR ISSUE 2 - SEPTEMBER 1995 PARTMARKING DETAIL — 7 BSS65 - L1 BSS65R - L5 BSS65 C B E ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER SYMBOL V(BR)CBO V(BR)EBO Cut-Off Currents Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage ICBO IEBO VCE(sat) VBE(sat) -0.
75 -0.
82 30 40 400 6 6 23 34 60 90 MIN.
-12 -12 -4 -100 -100 -0.
15 -0.
25 -0.
98 -1.
20 150 MHz pF pF nS nS SYMBOL VCBO VCEO VEBO ICM IC IC PTOT tj:tstg TYP.
MAX.
VALUE -12 -12 -4 -200 -100 -50 330 -55 to +150 UNIT V V V nA nA V V V V CONDITIONS.
IC=-10mA IC=-10µ A * IE=-10µ A VCB=-6V, IE=0 VEB=-4V, IC=0 IC=-10mA, IB=-1mA IC=-30mA, IB=-3mA IC=-10mA, IB=-1mA IC=-30mA, IB=-3mA IC=-10mA, VCE=-0.
3V IC=-30mA, VCE=-0.
5V IC=-30mA, VCE=-10V, f=100MHz VCB=-5V, IE=0, f=1MHz VEB=-0.
5V,...


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