P-Channel Enhancement Mode Field Effect Transistor - Fairchild Semiconductor
Description
May 1999
BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor
General Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is designed to minimize on-state resistance, provide rugged and reliable performance and fast switching.
They can be used, with a minimum of effort, in most applications requiring up to 0.
17A DC and can deliver pulsed currents up to 0.
68A.
This product is particularly suited to low voltage applications requiring a low current high side switch.
Features
BSS84: -0.
13A, -50V.
RDS(ON) = 10Ω @ VGS = -5V.
BSS110: -0.
17A, -50V.
RDS(ON) = 10Ω @ VGS = -10V Voltage controlled p-channel small signal switch.
High density cell design for low RDS(ON) .
High saturation current.
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S
G
D
Absolute Maximum Ratings
Symbol Parameter
TA = 25°C unless otherwise noted
BSS84
BSS110
Units
VDSS VDGR VGSS ID PD TJ,TSTG TL
Drain-Source Voltage Drain-Gate Voltage (RGS < 20 KΩ) Gate-Source Voltage - Continuous Drain Current - Continuous @ TA = 30/35 C - Pulsed @ TA = 25 C TA = 25°C
o o
-50 -50 ±20 -0.
13 -0.
52 0.
36 -55 to 150 300 -0.
17 -0.
68 0.
63
V V V A
Maximum Power Dissipation
W °C °C
Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/16" from case for 10 seconds
THERMAL CHARACTERISTICS
RθJA
Thermal Resistance, Junction-to-Ambient
350
200
°C/W
© 1997 Fairchild Semiconductor Corporation
BSS84 Rev.
C1 / BSS110.
Rev.
A2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol Parameter Conditions Type Min Typ Max Units OFF CHARACTERISTICS
BVDSS IDSS
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current
VGS = 0 V, ID = -250 µA VDS = -50 V, VGS = 0 V VDS = -25 V, VGS = 0 V TJ = 125°C
All All
-50 -15 -60 -0.
1
V µA µA µA nA
IGSSR VGS(th) RDS(ON) gFS
Gat...
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