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BSS110

Fairchild Semiconductor

P-Channel Enhancement Mode Field Effect Transistor - Fairchild Semiconductor


BSS110
BSS110

PDF File BSS110 PDF File



Description
May 1999 BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is designed to minimize on-state resistance, provide rugged and reliable performance and fast switching.
They can be used, with a minimum of effort, in most applications requiring up to 0.
17A DC and can deliver pulsed currents up to 0.
68A.
This product is particularly suited to low voltage applications requiring a low current high side switch.
Features BSS84: -0.
13A, -50V.
RDS(ON) = 10Ω @ VGS = -5V.
BSS110: -0.
17A, -50V.
RDS(ON) = 10Ω @ VGS = -10V Voltage controlled p-channel small signal switch.
High density cell design for low RDS(ON) .
High saturation current.
____________________________________________________________________________________________ S G D Absolute Maximum Ratings Symbol Parameter TA = 25°C unless otherwise noted BSS84 BSS110 Units VDSS VDGR VGSS ID PD TJ,TSTG TL Drain-Source Voltage Drain-Gate Voltage (RGS < 20 KΩ) Gate-Source Voltage - Continuous Drain Current - Continuous @ TA = 30/35 C - Pulsed @ TA = 25 C TA = 25°C o o -50 -50 ±20 -0.
13 -0.
52 0.
36 -55 to 150 300 -0.
17 -0.
68 0.
63 V V V A Maximum Power Dissipation W °C °C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/16" from case for 10 seconds THERMAL CHARACTERISTICS RθJA Thermal Resistance, Junction-to-Ambient 350 200 °C/W © 1997 Fairchild Semiconductor Corporation BSS84 Rev.
C1 / BSS110.
Rev.
A2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Type Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS = 0 V, ID = -250 µA VDS = -50 V, VGS = 0 V VDS = -25 V, VGS = 0 V TJ = 125°C All All -50 -15 -60 -0.
1 V µA µA µA nA IGSSR VGS(th) RDS(ON) gFS Gat...



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