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UPD5702TU

Part Number	UPD5702TU
Manufacturer	CEL
Description	Si LD MOS POWER AMPLIFIER
Published	Dec 21, 2017
Detailed Description	NEC's 2.4 GHz Si LD MOS POWER AMPLIFIER UPD5702TU FEATURES • MEDIUM OUTPUT POWER: POUT = +21 dBm TYP @PIN = -2 dBm, f =...
Datasheet	UPD5702TU PDF File

Overview

NEC's 2.
4 GHz Si LD MOS POWER AMPLIFIER UPD5702TU FEATURES • MEDIUM OUTPUT POWER: POUT = +21 dBm TYP @PIN = -2 dBm, f = 2.
45 GHz • ON CHIP OUTPUT POWER CONTROL FUNCTION • SINGLE SUPPLY VOLTAGE: VDS = 3.
0 V TYP • PACKAGED IN 8 PIN L2MM (2.
0 X 2.
2 X 0.
5mm) SUITABLE FOR HIGH- DENSITY SURFACE MOUNT DESCRIPTION NEC's UPD5702TU is a silicon LD MOS IC designed for use as a power amplifier up to 2.
4 GHz application.
This IC consists of two stage amplifiers.
The device is packaged in a low cost, surface mount 8 pin L2MM (Leadless Mini Mold) plastic package.
Ideally suited for high density surface mount designs.
NEC's stringent quality assurance and test procedures ensure the highest reliability and ...

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