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BSM50GB170DN2

Part Number	BSM50GB170DN2
Manufacturer	Siemens Semiconductor Group
Description	IGBT
Published	Mar 23, 2005
Detailed Description	BSM 50 GB 170 DN2 IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Package with...
Datasheet	BSM50GB170DN2 PDF File

Overview

BSM 50 GB 170 DN2 IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate • RG on,min = 27 Ohm Type BSM 50 GB 170 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1700 1700 Unit V VCE IC Package HALF-BRIDGE 1 Ordering Code C67070-A2701-A67 1700V 72A VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 72 50 TC = 25 °C TC = 80 °C Pulsed collector current, tp = 1 ms ICpuls 144 100 TC = 25 °C TC = 80 °C Power dissipation per IGBT Ptot 500 W + 150 -55 .
.
.
+ 150 ≤ 0.
25 ≤ 0.
75 4000 20 11 F 55 / 150 / 56 Vac mm K/W °C TC = 25 °C Chip temperature...

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BSM50GB170DN2 IGBT - Siemens Semiconductor Group

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