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K7B403625M

Samsung semiconductor
Part Number K7B403625M
Manufacturer Samsung semiconductor
Description 128Kx36-Bit Synchronous Burst SRAM
Published Nov 23, 2017
Detailed Description K7B403625M Document Title 128Kx36-Bit Synchronous Burst SRAM 128Kx36 Synchronous SRAM Revision History Rev. No. Histo...
Datasheet PDF File K7B403625M PDF File

K7B403625M
K7B403625M

Overview
K7B403625M Document Title 128Kx36-Bit Synchronous Burst SRAM 128Kx36 Synchronous SRAM Revision History Rev.
No.
History Draft Date 0.
0 Initial draft May.
15.
1997 0.
1 Modify power down cycle timing & Interleaved read timing, Insert Note 4 at AC timing characteristics.
Change ISB1 value from 10mA to 30mA.
Change ISB2 value from 10mA to 20mA.
Feb.
11.
1998 0.
2 Change Undershoot spec from -3.
0V(pulse width≤20ns) to -2.
0V(pulse width≤tCYC/2) Add Overshoot spec 4.
6V((pulse width≤tCYC/2) Change VIH max from 5.
5V to VDD+0.
5V April.
14.
1998 0.
3 Change ISB2 value from 20mA to 30mA.
May.
13.
1998 Change VDD condition from VDD=3.
3V+10%/-5% to VDD=3.
3V+0.
3V/-0.
165V.
1.
0 Final spec Release...


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