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C5695

Part Number	C5695
Manufacturer	Toshiba Semiconductor
Description	2SC5695
Published	Nov 22, 2017
Detailed Description	TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5695 Horizontal Deflection Output for High Resolution Displa...
Datasheet	C5695 PDF File

Overview

TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5695 Horizontal Deflection Output for High Resolution Display, Color TV 2SC5695 Unit: mm · High voltage: VCBO = 1500 V · Low saturation voltage: VCE (sat) = 3 V (max) · High speed: tf (2) = 0.
1 µs (typ.
) Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 1500 700 5 22 44 11 200 150 -55~150 Unit V V V A A W °C °C Electrical Characteristics (Tc = 25°C) JEDEC ― JEITA ― TOSHIBA 2-21F2A Wei...

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