0.5A Bridge Rectifiers - ON Semiconductor
Description
Bridge Rectifiers, 0.
5 A
MB1S-MB8S
Description The MB family of bridge rectifiers is a 0.
5 A rectifier family that
achieves high surge current absorption within a very small foot print.
Within its small 35 mm2 form factor, the MB family shines in its surge capability.
In order to absorb high surge currents, the design supports a 35 A IFSM rating and a 5.
0 A2Sec I2T rating.
Devices in the family are also rated to breakdown voltages of up to 1000 V.
These features make the MB family ideal for small power supplies that need a little extra surge capability.
For higher IFAV current ratings, lower profile packaging, or lower VF values, explore the onsemi MDB family of bridge rectifiers.
For improved VF and efficiency values in the MB package or even higher surge capability, ask about onsemi’s pending MBxSV family.
Features
• Low−Leakage • Surge Overload Rating: 35 A peak • Ideal for Printed Circuit Board • UL Certified: UL #E258596 • This Device is Pb−Free and RoHS Compliant
DATA SHEET www.
onsemi.
com
SOIC4 W CASE 751EP
MARKING DIAGRAM
−+
$Y&Z&3 MB*S
$Y &Z &3 MB*S *
= Logo = Assembly Plant Code = 3−Digit Data Code (Year & Week) = Specific Device Code = 1/2/4/6/8
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2007
1
August, 2021 − Rev.
5
Publication Order Number: MB8S/D
MB1S−MB8S
ABSOLUTE MAXIMUM RATINGS (Values are at TA = 25°C unless otherwise noted)
Symbol
Parameter
MB1S MB2S MB4S MB6S MB8S Unit
VRRM
Maximum Repetitive Reverse Voltage
100
200
400
600
800
V
VRMS VR
IF(AV) IFSM
Maximum RMS Bridge Input Voltage
DC Reverse Voltage (Rated VR) Average Rectified Forward Current at TA = 50°C
Non−Repetitive Peak Forward Surge Current: 8.
3 ms Single Half−Sine−Wave
70
140
280
420
560
V
100
200
400
600
800
V
0.
5
A
35
A
TSTG
Storage Temperature Range
−55 to +150
°C
TJ
Operating Junction Temperature Range
−55 to +150
_C
Stresses exceeding thos...
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