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BUZ100L

Siemens Semiconductor Group
Part Number BUZ100L
Manufacturer Siemens Semiconductor Group
Description Power Transistor
Published Mar 23, 2005
Detailed Description BUZ 100L SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/dt rated • Ultra...
Datasheet PDF File BUZ100L PDF File

BUZ100L
BUZ100L

Overview
BUZ 100L SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/dt rated • Ultra low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Pin 1 G Pin 2 D Pin 3 S Type BUZ 100L VDS 50 V ID 60 A RDS(on) 0.
018 Ω Package TO-220 AB Ordering Code C67078-S1354-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 60 Unit A ID IDpuls 240 TC = 101 °C Pulsed drain current TC = 25 °C Avalanche energy, single pulse EAS 250 dv/dt 6 mJ ID = 60 A, VDD = 25 V, RGS = 25 Ω L = 70 µH, Tj = 25 °C Reverse diode dv/dt kV/µs IS = 60 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C Gate source voltage Gate-source peak voltage,...


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