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BUT11F

Part Number	BUT11F
Manufacturer	NXP (https://www.nxp.com/)
Title	Silicon Diffused Power Transistor
Description	High-voltage, high-speed glass-passivated npn power transistor in a SOT186 envelope with electricall...
Features	ent peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperatur...
Published	Mar 23, 2005
Datasheet	BUT11F PDF File

Features

ent peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 850 450 5 10 2 4 20 150 150 UNIT V V A A A A W ˚C ˚C Ths ≤ 25 ˚C THERMAL RESISTANCES SYMBOL...

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