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BUP314S

Siemens Semiconductor Group
Part Number BUP314S
Manufacturer Siemens Semiconductor Group
Description IGBT
Published Mar 23, 2005
Detailed Description BUP 314S Preliminary data IGBT • High switching speed • Very low switching losses • Low tail current • Latch-up free ...
Datasheet PDF File BUP314S PDF File

BUP314S
BUP314S

Overview
BUP 314S Preliminary data IGBT • High switching speed • Very low switching losses • Low tail current • Latch-up free • Avalanche rated Pin 1 G Type BUP 314S Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V Pin 2 C Ordering Code C67040-A4207-A2 Pin 3 E VCE IC Package TO-218 AB 1200V 25A VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 25 17 TC = 25 °C TC = 90 °C Pulsed collector current, tp = 1 ms ICpuls 50 34 TC = 25 °C TC = 90 °C Avalanche energy, single pulse EAS 65 mJ IC = 25 A, VCC = 50 V, RGE = 25 Ω L = 200 µH, Tj = 25 °C Power dissipation Ptot 300 W -55 .
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+ 150 -55 .
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+ 150 °C TC ...


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