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BUP309

Siemens Semiconductor Group
Part Number BUP309
Manufacturer Siemens Semiconductor Group
Description IGBT
Published Mar 23, 2005
Detailed Description BUP 309 IGBT Preliminary data • High switching speed • Low tail current • Latch-up free • Avalanche rated • Low forward...
Datasheet PDF File BUP309 PDF File

BUP309
BUP309


Overview
BUP 309 IGBT Preliminary data • High switching speed • Low tail current • Latch-up free • Avalanche rated • Low forward voltage drop Remark: The TO-218 AB case doesn't solve the standards VDE 0110 and UL 508 for creeping distance Pin 1 G Type BUP 309 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1700 1700 Unit V Pin 2 C Ordering Code Q67078-A4204-A2 Pin 3 E VCE IC Package TO-218 AB 1700V 25A VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 25 16 TC = 25 °C TC = 90 °C Pulsed collector current, tp = 1 ms ICpuls 50 32 TC = 25 °C TC = 90 °C Avalanche energy, single pulse EAS 23 mJ IC = 15 A, VCC = 50 V, RGE = 25 Ω L = 200 µH, Tj = 25 °C Power dissipation Ptot 310 W -55 .
.
.
+ 150 -55 .
.
.
+ 150 Jul-30-1996 °C TC = 25 °C Chip or operating temperature Storage temperature Semiconductor Group Tj Tstg 1 BUP 309 Maximum Ratings Parameter DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal Resistance Thermal resistance, chip case Symbol Values E 55 / 150 / 56 Unit - RthJC ≤ 0.
4 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min.
Static Characteristics Gate threshold voltage Values typ.
max.
Unit VGE(th) 4.
5 5.
5 3.
5 4.
5 1 6.
5 4.
2 - V VGE = VCE, IC = 1 mA Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 15 A, Tj = 25 °C VGE = 15 V, IC = 15 A, Tj = 125 °C VGE = 15 V, IC = 15 A, Tj = 150 °C Zero gate voltage collector current ICES 250 1000 µA VCE = 1700 V, VGE = 0 V, Tj = 25 °C VCE = 1700 V, VGE = 0 V, Tj = 125 °C Gate-emitter leakage current IGES 100 nA VGE = 20 V, VCE = 0 V AC Characteristics Transconductance gfs 2000 160 65 - S pF 2700 240 100 VCE = 20 V, IC = 15 A Input capacitance Ciss Coss - VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Crss - VCE = 25 V, VGE = 0 V, f = 1 MHz Semiconductor Group 2 Jul-30-1996 ...


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