DatasheetsPDF.com

BUP307D

Siemens Semiconductor Group
Part Number BUP307D
Manufacturer Siemens Semiconductor Group
Description IGBT
Published Mar 23, 2005
Detailed Description BUP 307D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail cu...
Datasheet PDF File BUP307D PDF File

BUP307D
BUP307D


Overview
BUP 307D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 G Type BUP 307D Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V Pin 2 C Ordering Code Q67040-A4221-A2 Pin 3 E VCE IC Package TO-218 AB 1200V 35A VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 35 23 TC = 25 °C TC = 90 °C Pulsed collector current, tp = 1 ms ICpuls 70 46 TC = 25 °C TC = 90 °C Diode forward current IF 18 TC = 90 °C Pulsed diode current, tp = 1 ms IFpuls 108 TC = 25 °C Power dissipation Ptot 300 W -55 .
.
.
+ 150 -55 .
.
.
+ 150 °C TC = 25 °C Chip or operating temperature Storage temperature Tj Tstg Semiconductor Group 1 Dec-02-1996 BUP 307D Maximum Ratings Parameter DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal Resistance Thermal resistance, chip case Diode thermal resistance, chip case Symbol Values E 55 / 150 / 56 Unit - RthJC RthJCD ≤ 0.
42 ≤ 1.
25 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min.
Static Characteristics Gate threshold voltage Values typ.
max.
Unit VGE(th) 4.
5 5.
5 2.
7 3.
3 3.
4 4.
3 6.
5 3.
2 3.
9 - V VGE = VCE, IC = 0.
35 mA, Tj = 25 °C Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 25 A, Tj = 25 °C VGE = 15 V, IC = 25 A, Tj = 125 °C VGE = 15 V, IC = 42 A, Tj = 25 °C VGE = 15 V, IC = 42 A, Tj = 125 °C Zero gate voltage collector current ICES 0.
5 mA nA 100 VCE = 1200 V, VGE = 0 V, Tj = 25 °C Gate-emitter leakage current IGES VGE = 25 V, VCE = 0 V AC Characteristics Transconductance gfs 5.
5 8 2000 160 65 - S pF 2700 240 100 VCE = 20 V, IC = 15 A Input capacitance Ciss Coss - VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Crss - VCE = 25 V, VGE = 0 V, f = 1 MHz Semiconductor Grou...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)