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BUP306D

Siemens Semiconductor Group
Part Number BUP306D
Manufacturer Siemens Semiconductor Group
Description IGBT
Published Mar 23, 2005
Detailed Description BUP 306D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail cur...
Datasheet PDF File BUP306D PDF File

BUP306D
BUP306D


Overview
BUP 306D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 G Pin 2 C Pin 3 E Type BUP 306D Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage VCE IC Package TO-218 AB Ordering Code Q67040-A4222-A2 1200V 23A Symbol Values 1200 1200 Unit V VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 23 15 TC = 25 °C TC = 90 °C Pulsed collector current, tp = 1 ms ICpuls 46 30 TC = 25 °C TC = 90 °C Diode forward current IF 18 TC = 90 °C Pulsed diode current, tp = 1 ms IFpuls 108 TC = 25 °C Power dissipation Ptot 165 W -55 .
.
.
+ 150 -55 .
.
.
+ 150 °C TC = 25 °C Chip or operating temperature Storage temperature Tj Tstg Semiconductor Group 1 Jul-30-1996 BUP 306D Maximum Ratings Parameter DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal Resistance Thermal resistance, chip case Diode thermal resistance, chip case Symbol Values E 55 / 150 / 56 Unit - RthJC RthJCD 0.
63 1.
25 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min.
Static Characteristics Gate threshold voltage Values typ.
max.
Unit VGE(th) 4.
5 5.
5 2.
8 3.
8 6.
5 3.
3 4.
3 V VGE = VCE, IC = 0.
7 mA Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 10 A, Tj = 25 °C VGE = 15 V, IC = 10 A, Tj = 125 °C Zero gate voltage collector current ICES 0.
4 mA nA 100 VCE = 1200 V, VGE = 0 V, Tj = 25 °C Gate-emitter leakage current IGES VGE = 20 V, VCE = 0 V AC Characteristics Transconductance gfs 3.
5 5.
5 1300 100 50 - S pF 1750 150 75 VCE = 20 V, IC = 10 A Input capacitance Ciss Coss - VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Crss - VCE = 25 V, VGE = 0 V, f = 1 MHz Semiconductor Group 2 Jul-30-1996 BUP 306D Electrical Characteristics, at Tj = 25 °C, unless otherwise ...


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