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BUK555-200B

NXP
Part Number BUK555-200B
Manufacturer NXP
Description PowerMOS transistor Logic level FET
Published Mar 23, 2005
Detailed Description Philips Semiconductors Product Specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhance...
Datasheet PDF File BUK555-200B PDF File

BUK555-200B
BUK555-200B

Overview
Philips Semiconductors Product Specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.
The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general purpose switching applications.
BUK555-200A/B QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK555 Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance; VGS = 5 V MAX.
-200A 200 14 125 175 0.
23 MAX.
-200B 200 13 125 175 0.
28 UNIT V A W ˚C Ω PINNING - TO220AB PIN 1 2 3 ...


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