DatasheetsPDF.com

UGF09030

Part Number	UGF09030
Manufacturer	CREE
Description	26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET
Published	Sep 4, 2017
Detailed Description	UGF09030 30W, 1 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applicat...
Datasheet	UGF09030 PDF File

Overview

UGF09030 30W, 1 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applications in the frequency band 800MHz to 1000MHz.
Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier Power Amplifiers in Class AB operation.
• ALL GOLD metal system for highest reliability • Industry standard package • Suggested alternative to the MRF9030 • Internally matched for repeatable manufacturing • High gain, high efficiency and high linearity • Application Specific Performance, 870MHz GSM: 30 Watts 17.
50dB EDGE: 13 Watts 17.
50dB IS95 CDMA: 3.
5 Watts 17.
50 dB CDMA2000: TBD Watts 17.
50dB Package Type 440095 P...

Similar Datasheet

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)