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MJD112

Part Number	MJD112
Manufacturer	KEC
Description	EPITAXIAL PLANAR NPN TRANSISTOR
Published	Sep 3, 2017
Detailed Description	SEMICONDUCTOR TECHNICAL DATA MJD112/L EPITAXIAL PLANAR NPN TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITT...
Datasheet	MJD112 PDF File

Overview

SEMICONDUCTOR TECHNICAL DATA MJD112/L EPITAXIAL PLANAR NPN TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.
FEATURES High DC Current Gain.
: hFE=1000(Min.
), VCE=4V, IC=1A.
Low Collector-Emitter Saturation Voltage.
Straight Lead (IPAK, "L" Suffix) Complementary to MJD117/L.
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Base Current DC Collector Power Dissipation Ta=25 Tc=25 Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING 100 100 5 2 4 50 1.
3 20 150 -55 150 UNIT V V V A mA W C B Q A C H FF 123 1...

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