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2SD1803

Part Number	2SD1803
Manufacturer	GME
Description	NPN Epitaxial Planar Silicon Transistors
Published	Sep 2, 2017
Detailed Description	NPN Epitaxial Planar Silicon Transistors FEATURES z Low collector-to-emitter saturation voltage. Pb z High current an...
Datasheet	2SD1803 PDF File

Overview

NPN Epitaxial Planar Silicon Transistors FEATURES z Low collector-to-emitter saturation voltage.
Pb z High current and high fT.
Lead-free z Excellent linerarity of hFE.
z Fast switching time.
Production specification 2SD1803 APPLICATIONS z High-Current Switching Applications.
TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage 60 V VCEO Collector-Emitter Voltage 50 V VEBO IC ICM PC Tj ,Tstg Emitter-Base Voltage Collector Current DC PULSE Collector Power Dissipation Tc=25℃ Ta=25℃ Junction and Storage temperature range 6 5 8 20 1 -40 to +150 V A W ℃ V(W)088 Rev.
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