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2SD2033

Inchange Semiconductor
Part Number 2SD2033
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
Published Aug 28, 2017
Detailed Description isc Silicon NPN Power Transistor DESCRIPTION ·Good Linearity of hFE · Collector-Emitter Breakdown Voltage- : V(BR)CEO= ...
Datasheet PDF File 2SD2033 PDF File

2SD2033
2SD2033

Overview
isc Silicon NPN Power Transistor DESCRIPTION ·Good Linearity of hFE · Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Complement to Type 2SB1353 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high voltage driver applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5.
0 V IC Collector Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 1.
5 A 1.
8 W 15 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD...


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