DatasheetsPDF.com

NGTG50N60FLWG

ON Semiconductor
Part Number NGTG50N60FLWG
Manufacturer ON Semiconductor
Description IGBT
Published Aug 27, 2017
Detailed Description NGTG50N60FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench constructi...
Datasheet PDF File NGTG50N60FLWG PDF File

NGTG50N60FLWG
NGTG50N60FLWG

Overview
NGTG50N60FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.
Features • Low Saturation Voltage using Trench with Field Stop Technology • Low Switching Loss Reduces System Power Dissipation • Optimized for High Speed Switching • 5 ms Short−Circuit Capability • These are Pb−Free Devices Typical Applications • Power Factor Correction • Solar Inverters • Uninterruptable Power Supply (UPS) ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage Collector current @ TC = 25°C @ T...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)