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NGTG30N60FLWG

ON Semiconductor
Part Number NGTG30N60FLWG
Manufacturer ON Semiconductor
Description IGBT
Published Aug 27, 2017
Detailed Description NGTG30N60FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench constructi...
Datasheet PDF File NGTG30N60FLWG PDF File

NGTG30N60FLWG
NGTG30N60FLWG

Overview
...on, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.
Features • Low Saturation Voltage using Trench with Field Stop Technology • Low Switching Loss Reduces System Power Dissipation • Optimized for High Speed Switching • 5 ms Short−Circuit Capability • These are Pb−Free Devices Typical Applications • Power Factor Correction • Solar Inverters • Uninterruptable Power Supply (UPS) ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage Collector current @ TC = 25°C @ TC = 100°C VCES 600 V IC A 60 30 Pulsed collector limited by TJmax current, Tpulse Diode Forward Current @ TC = 25°C...


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