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TIP112

Part Number	TIP112
Manufacturer	KEC
Description	EPITAXIAL PLANAR NPN TRANSISTOR
Published	Aug 25, 2017
Detailed Description	SEMICONDUCTOR TECHNICAL DATA MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. FEATURES...
Datasheet	TIP112 PDF File

Overview

SEMICONDUCTOR TECHNICAL DATA MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.
FEATURES High DC Current Gain.
: hFE=1000(Min.
), VCE=4V, IC=1A.
Low Collector-Emitter Saturation Voltage.
Complementary to TIP117.
TIP112 EPITAXIAL PLANAR NPN TRANSISTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Base Current DC VCBO VCEO VEBO IC ICP IB 100 100 5 2 4 50 Collector Power Ta=25 2 PC Dissipation Tc=25 50 Junction Temperature Tj 150 Storage Temperature Range Tstg -65 150 UNIT V V V A mA W EQUIVALENT CIRCUIT ELECTRICAL CHARACTERISTICS (Ta=...

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