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DU2860T

MA-COM
Part Number DU2860T
Manufacturer MA-COM
Description RF Power MOSFET Transistor
Published Aug 21, 2017
Detailed Description DU2860T RF Power MOSFET Transistor 60 W, 2 - 175 MHz, 28 V Features  N-Channel enhancement mode device  DMOS structur...
Datasheet PDF File DU2860T PDF File

DU2860T
DU2860T

Overview
DU2860T RF Power MOSFET Transistor 60 W, 2 - 175 MHz, 28 V Features  N-Channel enhancement mode device  DMOS structure  Lower capacitances for broadband operation  High saturated output power  Lower noise figure than bipolar devices  RoHS Compliant ABSOLUTE MAXIMUM RATINGS AT 25° C Parameter Symbol Rating Drain-Source Voltage Gate-Source Voltage Drain-Source Current Power Dissipation Junction Temperature VDS VGS IDS PD TJ 65 20 12 159 200 Storage Temperature Thermal Resistance TSTG θJC -65 to +150 1.
1 Units V V A W °C °C °C/W TYPICAL DEVICE IMPEDANCE F (MHz) 30 ZIN (Ω) 9.
0 - j4.
0 ZLOAD (Ω) 6.
0 +j0.
0 50 10.
0 - j6.
5 5.
0 + j2.
0 100 6.
0 - j5.
5 4.
0 + j3.
0 200 1.
1 - j...


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