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DU2810S

MA-COM
Part Number DU2810S
Manufacturer MA-COM
Description RF Power MOSFET Transistor
Published Aug 21, 2017
Detailed Description DU2810S RF Power MOSFET Transistor 10 W, 2 - 175 MHz, 28 V Features  N-Channel enhancement mode device  DMOS structur...
Datasheet PDF File DU2810S PDF File

DU2810S
DU2810S

Overview
DU2810S RF Power MOSFET Transistor 10 W, 2 - 175 MHz, 28 V Features  N-Channel enhancement mode device  DMOS structure  Lower capacitances for broadband operation  Common source configuration  Low noise floor  RoHS Compliant ABSOLUTE MAXIMUM RATINGS AT 25° C Parameter Symbol Rating Drain-Source Voltage Gate-Source Voltage Drain-Source Current Power Dissipation Junction Temperature Storage Temperature Thermal Resistance VDS VGS IDS PD TJ TSTG θJC 65 20 2.
8 35 200 -65 to +150 2 Units V V A W °C °C °C/W TYPICAL DEVICE IMPEDANCE F (MHz) 30 ZIN (Ω) 20 - j11.
0 ZLOAD (Ω) 23.
0 + j3.
0 50 24.
0 - j15.
0 19.
0 +j5.
0 100 18.
0 - j18.
0 14.
0 + j6.
0 200 12.
0—j19.
0 9.
0 + j5.
0 VDD = ...


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