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2N6439

Advanced Semiconductor
Part Number 2N6439
Manufacturer Advanced Semiconductor
Description NPN SILICON RF POWER TRANSISTOR
Published Aug 21, 2017
Detailed Description 2N6439 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2N6439 is a Common Emitter Device Designed For Large signal...
Datasheet PDF File 2N6439 PDF File

2N6439
2N6439


Overview
2N6439 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2N6439 is a Common Emitter Device Designed For Large signal output amplifier stages in the 225-400 MHz range.
FEATURES INCLUDE: • Internal Input Matching Network • 30:1 Load VSWR Capability • All Gold Metalization MAXIMUM RATINGS VCB 60 V PDISS 146 W @ TC = 25 °C TSTG θJC -65 °C to +200 °C 1.
2 °C/W PACKAGE STYLE .
500 6L FLG 1 = Collector 2 = Base 3 & 4 = Emitter CHARACTERISTICS TC = 25 °C SYMBOL TEST CONDITIONS MINIMUM BVCBO IC = 50 mA 33 BVCES IC = 50 mA 60 BVCBO IE = 5.
0 mA 4.
0 hFE VCE = 5.
0 V IC = 1.
0 A 10 COB VCB = 28 V f = 1 MHz GPe VCE = 28 V POUT = 60 W f =225- 400 MHz 7.
8 GPe 7.
8 ηC VCE = 28 ...



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